| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66371
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-87 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| filingDate |
2014-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-104576638-B |
| titleOfInvention |
ESD protective device |
| abstract |
A kind of semiconductor ESD protective device includes vertically arranged alternating conductivity type layers, wherein the layer is arranged as silicon controlled rectifier (SCR), silicon controlled rectifier (SCR) is arranged as vertical devices and has relative top contact and bottom contact. |
| priorityDate |
2013-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |