http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104576352-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2013-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104576352-B |
| titleOfInvention | Improve the method for deep trench cmp homogeneity |
| abstract | The invention discloses a kind of method of improvement deep trench cmp homogeneity, including：1）Layer oxide film is deposited on a silicon substrate；2）On oxide-film surface, one layer of sacrifice layer is deposited, wherein, the material of sacrifice layer is nitride film or nitrogen oxidation film；3）The photoetching of deep trench and etching；4）Using wet etching, lateral etching is carried out to sacrifice layer；5）Selective epitaxial layer growth is carried out in deep trench；6）Wet etching removes sacrifice layer；7）Using oxide-film as stop-layer, cmp is carried out.The epitaxial layer that the present invention can solve to be higher by the outgrowth for stopping layer surface when p-type and n-type semiconductor post pitch reductions easily connects and load effect is produced to subsequent chemical mechanical grinding technics, so as to avoid the residual that load effect is produced. |
| priorityDate | 2013-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.