http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104517831-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-32 |
| filingDate | 2013-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104517831-B |
| titleOfInvention | A method of making semiconductor devices |
| abstract | The present invention relates to a kind of methods making semiconductor devices, including：Semiconductor substrate is provided；Prefilter layer is formed on the semiconductor substrate；Thin oxide layer and high rate of etch bottom antireflective coating are sequentially formed on the prefilter layer；Patterned photoresist layer is formed on the high rate of etch bottom antireflective coating；The high rate of etch bottom antireflective coating is etched according to the patterned photoresist layer, to form the opening for exposing the thin oxide layer；Remove the patterned photoresist layer；Remove the thin oxide layer exposed.In the manufacture craft of the semiconductor devices of the present invention, it is formed in substrate using high rate of etch bottom antireflective coating and thin oxide layer, the problem of solving the problems, such as the reflection of the substrate when carrying out injection photoetching process, and avoiding to prefilter layer and substrate damage, to improve the performance of device. |
| priorityDate | 2013-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.