http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104505418-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-077 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0735 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-077 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2014-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104505418-B |
| titleOfInvention | Compound unijunction PIN solar cells of crystal silicon and silicon Germanium films with transition zone and preparation method thereof |
| abstract | The invention provides a kind of crystal silicon with transition zone and the compound unijunction PIN solar cells of silicon Germanium films and preparation method thereof.The solar cell is provided with transition zone simultaneously on the preceding surface of n-type silicon chip or in the back surface of n-type silicon chip or on the preceding surface of n-type silicon chip and back surface；The transition zone is one layer or multilayer, wherein any one layer is silicon rich silicon oxide layer.The preparation method is after silicon chip completes making herbs into wool, polishing and cleaning, hydrogenation drying process before adding, meanwhile, after the technique of this transition zone is completed, rear hydrogenation treatment mode is added, two methods are used to improve the stability of interface quality and structure.Using this transition zone and the preceding hydrogenation drying process and rear hydrotreated crystal silicon and silicon Germanium films composite battery with transition zone is employed, can be on the basis of original by battery conversion efficiency raising more than 10%. |
| priorityDate | 2014-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.