http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104502322-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-65 |
| filingDate | 2014-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104502322-B |
| titleOfInvention | Electrochemical in-situ SERS chip and its production method |
| abstract | Electrochemical in-situ SERS chip disclosed in this invention, including substrate, substrate is integrated with working electrode, to electrode and reference electrode, wherein working electrode surface is nanostructured, chip list surface layer is provided with conducting end, working electrode working end, to welding tip and reference electrode working end, and other surfaces layer specific region is insulating barrier.Insulating barrier separates the working region where the conductive region where the conducting end on chip and three welding tips.The present invention makes substrate using silk-screen printing technique, handles working electrode surface with electrodeposit reaction, the time is short and operation is relatively simple and easily controllable, is easy to fairly large making and production.Chip chip produced by the present invention, overcomes that columnar electrode volume is larger to be difficult to integrated defect, realizes highly integrated and miniaturization.And the working electrode surface of the working electrode surface for possessing nanostructured, especially porous nano dendritic structure after electrodeposit reaction, it is more homogeneous. |
| priorityDate | 2014-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.