http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104485328-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-567 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-04113 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7393 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| filingDate | 2014-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104485328-B |
| titleOfInvention | Semiconductor devices with IGBT units and desaturation channel structure |
| abstract | The present invention relates to the semiconductor devices with IGBT units and desaturation channel structure.A kind of semiconductor devices includes：IGBT units including Second Type doped drift region；With the desaturation semiconductor structure for the charge carrier concentration in desaturation IGBT units.The desaturation structure includes：The first kind doped region of pn-junction is formed with drift region, and in two parts of the groove of IGBT units one side arrangement or two grooves in first kind doped region and along horizontal direction.Each in each or two grooves in two trench portions has the wide portion below narrow portion.The first kind doping desaturation channel region of first kind doped region is defined at least along horizontal direction in the wide portion.The narrow portion defines the first kind doping mesa region of first kind doped region at least along horizontal direction.The desaturation channel region has the width less than mesa region, and adjacent mesa region along horizontal direction. |
| priorityDate | 2013-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.