http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104475137-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J27-186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J27-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C02F1-30 |
| filingDate | 2014-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104475137-B |
| titleOfInvention | In-situ doping type bismuth phosphate-cuprous oxide composite photo-catalyst and preparation method thereof |
| abstract | The invention discloses a kind of in-situ doping type bismuth phosphate-cuprous oxide composite photo-catalyst, be made up of fluorine, nitrogen co-doped bismuth phosphate and cuprous oxide, wherein the mol ratio of fluorine, nitrogen co-doped bismuth phosphate and cuprous oxide is 1:0.2～1. The invention also discloses its preparation method: after five water bismuth nitrates are dissolved in salpeter solution, add phosphate solution and ammonium chloride, add again the mixed solution of cupric sulfate pentahydrate, pentitol and NaOH to stir, through microwave hydrothermal reaction, centrifugal, dry obtaining. In-situ doping type bismuth phosphate-cuprous oxide composite photo-catalyst of the present invention, by nonmetal fluorine and the ion co-doped capture ability that effectively improves bismuth phosphate interface place electronics of nitrogen, strengthens the transport efficiency of electron hole; By oxygen vacancy concentration in nonmetallic ion-doped increase bismuth phosphate semiconductor, and then improve the light-catalysed photocatalytic activity of bismuth phosphate. |
| priorityDate | 2014-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.