http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104466332-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01P5-12 |
| filingDate | 2014-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104466332-B |
| titleOfInvention | Power distribution network applied to three-port input and output of L waveband |
| abstract | The invention discloses a power distribution network applied to three-port input and output of an L waveband. The distribution network comprises a thin film substrate, a metal layer arranged on the surface of the thin film substrate, two polytetrafluoroethylene substrates and metal layers arranged on the surfaces of the two polytetrafluoroethylene substrates, wherein the metal layer on the surface of the thin film substrate is composed of a microstrip circuit and comprises three input ports and three output ports. The metal layers on the surfaces of the two polytetrafluoroethylene substrates are composed of microstrip circuits and each comprise an input end and three output ends. The similar-shape mirror symmetry relation is achieved between the two polytetrafluoroethylene substrates and the microstrip circuits on the surfaces of the two polytetrafluoroethylene substrates. The distribution network can be conveniently applied to the power distribution of the L waveband and has the advantages of being small in size, simple in structure, easy to machine, low in cost and the like, and within the frequency band of 962 MHz to 1213 MHz, the reflection loss of each port is lower than -10 dB and the insertion loss is lower than 6 dB. |
| priorityDate | 2014-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.