| abstract |
The invention discloses a copper chemical mechanical finishing polishing solution applicable to low pressure. The polishing solution comprises the following components by weight percentage: 3-15% of grinding particles, 1-5% of complexing agent, 0.5-3% of oxidizing agent, namely hydrogen peroxide, 0.01-1% of surfactant, 0.001-1% of bacteriostatic agent and the balance of water. The polishing solution is applicable to finishing polishing of copper when the low pressure is not greater than 5.516kPa, and contains no corrosion inhibitor. |