http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104425645-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2013-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104425645-B |
| titleOfInvention | CIGS thin film solaode stays the method on the clear limit of Mo |
| abstract | The present invention is applicable to CIGS thin film solaode manufacture field, it is provided that the method staying the clear limit of Mo in the processing of a kind of CIGS thin film solaode, comprises the following steps: by the battery work platform for placing treating clear limit；Machinery icking tool moves to treat above the position on clear limit；Described machinery icking tool is ordered about by constant force and declines and at the uniform velocity penetrate transparency conducting layer and the CIGS absorbed layer of the battery treating clear limit, wherein, described constant force less than described machinery icking tool penetrate described in treat clear limit battery MO layer needed for power；Suffered constant force persistently exports so that the cutter head of described machinery icking tool just surface with described MO layer contacts；The described battery treating clear limit moves with described machinery icking tool relative level, scrapes described transparency conducting layer and the edge of CIGS absorbed layer.The inventive method uses the mode that cutter is scraped, and utilizes machinery icking tool constant force to penetrate, can disposably wipe transparency conducting layer and the edge of CIGS absorbed layer off, and method is simply efficient, low cost. |
| priorityDate | 2013-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.