http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104425440-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate | 2013-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104425440-B |
| titleOfInvention | A kind of semiconductor devices and forming method thereof |
| abstract | A kind of semiconductor devices and forming method thereof.Wherein, in the method for forming semiconductor devices, after the separation layer after forming the upper and lower battery lead plate of covering, stress relief layer is formed above separation layer, is to form interlayer dielectric layer on the stress relief layer afterwards.The pressure that the interlayer dielectric layer that the stress relief layer can be effectively reduced on the stress relief layer is put on the upper and lower battery lead plate, there is deformation equivalent damage so as to which effective refuge states upper and lower battery lead plate, to improve the bonding strength of the first conductive plunger and the second conductive plunger and the upper and lower battery lead plate. |
| priorityDate | 2013-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.