http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104425210-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2013-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104425210-B |
| titleOfInvention | The forming method of semiconductor structure |
| abstract | A kind of forming method of semiconductor structure, the forming method of the semiconductor structure include：Substrate is provided, is formed with conductive layer in the substrate, the substrate surface is formed with dielectric layer；The opening with the exposure partial electroconductive layer is formed in the dielectric layer；The conductive layer surface of open bottom is passivated using passivating dip, forms passivation layer；Using cleaning solution, opening inner wall is cleaned, the polymer of removal opening inner wall surface.The forming method of the semiconductor structure can be corroded to avoid conductive layer, improve the interconnection performance of the metal interconnection structure of subsequent processes. |
| priorityDate | 2013-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.