http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104419944-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B1-33 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25B1-00 |
| filingDate | 2014-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104419944-B |
| titleOfInvention | The method that electrochemistry prepares silicon fiml |
| abstract | The invention provides a kind of method for preparing silicon thin film, the silicon thin film prepared using methods described, and the electronic equipment including the silicon thin film.Methods described includes for the element silicon solution of oxidation putting on substrate and sintering oxidation silicon fiml is to prepare close silicon oxide film, and electrochemical reduction oxidation silicon thin film re-sinters porous silicon film to form porous silicon film.Therefore, compared with conventional method, the middle silicon thin film for using such as semiconductor, solar cell, battery can easily be prepared with relatively low price and more a small number of technique, and therefore improve the price competitiveness of product. |
| priorityDate | 2013-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 337.