| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53276 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2018-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-104396005-B |
| titleOfInvention |
For the high conductivity high frequency through hole of electronic system |
| abstract |
A kind of through-silicon-via conductive in high frequency is described.In one example, through hole includes at least part of passage Jing Guo silicon bare crystalline.First conductive layer has the first electrical conductivity.Second conductive layer covers the outer surface of the first conductive layer, and with second electrical conductivity higher than the first electrical conductivity. |
| priorityDate |
2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |