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filingDate 2013-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-104395236-B
titleOfInvention The manufacture method of high-purity polycrystalline silicon
abstract The present invention provides through use the low unstrpped gas of concentration of carbon-containing impurities to realize the technology of the further high purity of polysilicon.First, preparation trichlorosilane, as sample (S101), utilizes GC/MS SIM method to analyze its carbon-containing impurities amount (S102).Whether qualified (S103) is judged, it is determined that for (S103: yes) in the case of certified products, as the production of raw material for use (104) of high-purity polycrystalline silicon based on CVD based on analysis result.On the other hand, it is determined that for (S103: no) in the case of defective work, then not as the production of raw material for use of polysilicon.If impurity analysis based on GC/MS SIM method use be connected in series non-polar column and middle polarity post and the post that obtains as detached dowel, then can carry out chlorosilane simultaneously and separate with hydro carbons and chlorosilane separates with methyl-monosilane class.
priorityDate 2012-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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