http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104377161-B

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
filingDate 2013-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2017-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-104377161-B
titleOfInvention method for manufacturing through hole structure
abstract The invention provides a method for manufacturing a through hole structure. The method comprises the steps of conducting etching on a dielectric layer with the isotropic etching method so that a first through hole can be formed in the dielectric layer, wherein the dielectric layer is located on a first metal layer, and the depth of the first through hole is smaller than that of the dielectric layer; etching the portion, below the first through hole, of the dielectric layer with the straight port etching method so that a second through hole can be formed between the first through hole and the first metal layer, wherein the sum of the depth of the second through hole and the depth of the first through hole is equal to the depth of the dielectric layer; etching the first through hole and the second through hole with the chamfer etching method. By the adoption of the method, the purpose of smoothing the sharp corner of the first through hole and the sharp corner of the second through hole is realized, the smoothness of the first through hole and the smoothness of the second through hole are improved, and then metal filling capacity is improved and production cost is reduced.
priorityDate 2013-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.