| abstract |
Provided are a metal nitride material for a thermistor, which has a high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M[1-w]A[w])[x]Al[y]N[z] (where "M" represents at least one of Ti, V, Cr, Mn, Fe, and Co, "A" represents at least one of Sc, Zr, Mo, Nb, and W, 0.0<w<1.0, 0.70<=y/(x+y)<=0.98, 0.4<=z<=0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. |