http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104356950-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| filingDate | 2014-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104356950-B |
| titleOfInvention | Sapphire wafer polishing solution |
| abstract | The invention discloses a sapphire wafer polishing solution which consists of the following components in percentage by weight: 20 to 30 percent of silica sol with solid content of 30 to 40 weight percent, 10 to 20 percent of alumina with a diameter of 80 to 200nm, 0.1 to 0.4 percent of organic base, 0.1 to 3 percent of a dispersing agent, 0.3 to 1 percent of nonylphenol polyethylene ether and the balance of de-ionized water. According to the sapphire wafer polishing solution, the silica sol and the alumina are compounded, so that the polishing speed is ensured, and machining scratches are avoided; furthermore, the nonylphenol polyethylene ether, the dispersing agent and the like are added to form a stable colloidal dispersion system to promote the full wetting of a polished wafer and a polishing pad and the stable and uniform distribution of the polishing solution between the polishing pad and the polishing wafer, so that the reaction rate of each part of the surface of the wafer can be balanced, and the polishing quality is ensured and improved; the sapphire wafer polishing solution can be used for the machining of a sapphire wafer. |
| priorityDate | 2014-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.