| abstract |
The present invention relates to the technology of the germanium percentage in regulation MOS device.The integrated circuit structure of the present invention includes：Positioned at the gate stack of semiconductor substrate, and the opening extended in Semiconductor substrate, its split shed adjacent gate stack.First silicon Germanium regions are set in the opening, wherein, the first silicon Germanium regions have the first germanium percentage.Second silicon Germanium regions cover the first silicon Germanium regions, wherein, the second silicon Germanium regions have the second germanium percentage more than the first germanium percentage.Metal silicide region is located above the second silicon Germanium regions and contacted with the second silicon Germanium regions. |