http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104347594-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1e3d8364bf64e4ac6e1a9cd5df2bd54 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2013-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bdc7e5fe88ed17a41f83c590a7f9c09 |
| publicationDate | 2015-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104347594-A |
| titleOfInvention | Silicon through hole test structure, silicon through hole test method and silicon through hole formation method |
| abstract | The invention relates to a silicon through hole test structure, a silicon through hole test method and a silicon through hole formation method. The silicon through hole test structure comprises a first metal layer, a second medium layer, a second metal layer and a third metal layer, wherein the first metal layer comprises a first portion arranged on at least a part of an upper surface of a conductive column and a second portion arranged on a part of an upper surface of a first medium layer, the upper surface of the first portion and the upper surface of the conductive column at the corresponding position are consistent in appearance, the second medium layer is arranged on the first medium layer and the first metal layer, a test plug is arranged on the first portion and penetrates through the second medium layer, a contrast plug is arranged on the second portion and penetrates through the second medium layer, the second metal layer is arranged on the upper surface of the test plug and on a part of the upper surface of the second medium layer, the third metal layer is arranged on the upper surface of the contrast plug and on a part of the upper surface of the second medium layer, and the third metal layer and the second metal layer realize insulation. The silicon through hole test structure can test whether the conductive column has surface defects. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114743893-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106571311-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106571311-B |
| priorityDate | 2013-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.