http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104347423-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66651 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2013-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104347423-B |
| titleOfInvention | The formation of integrated knot and contact is to form transistor |
| abstract | The invention discloses the formation of integrated knot and contact to form transistor, wherein, a kind of method, which is included in above semiconductor regions, forms gate stack, in semiconductor regions disposed thereon impurity layer, in impurity layer disposed thereon metal level.Then annealing is implemented, wherein, element in impurity layer is diffused into form regions and source/drain in a part for semiconductor regions by annealing, and the superficial layer of the part of metal level and semiconductor regions reacts to form source/drain suicide areas domain above regions and source/drain. |
| priorityDate | 2013-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.