http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104347413-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2013-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104347413-B |
| titleOfInvention | A kind of method making FinFET semiconductor device |
| abstract | The present invention relates to a kind of method making FinFET semiconductor device, including: Semiconductor substrate is provided；Form the hard mask layer with shallow trench pattern on the semiconductor substrate；Etch described Semiconductor substrate to form shallow trench and the fin between described shallow trench；Depositing first oxide layer on the semiconductor substrate, to be partially filled with described shallow trench；Deposit recesses stop-layer on described first oxide skin(coating)；Depositing second oxide layer on described groove stop-layer；Perform the first planarisation step, stop at the described groove stop-layer at described fin top；Perform the second planarisation step, stop at described hard mask layer；Described second oxide skin(coating) in shallow trench described in etch-back, to expose the described groove stop-layer being positioned in described shallow trench.The method according to the invention can well the technique change that is etched back to of control oxide layer. |
| priorityDate | 2013-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.