http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104347356-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02634 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2014-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104347356-B |
| titleOfInvention | Homogeneous epitaxial growth method on GaN (gallium nitride) substrate |
| abstract | The invention discloses a homogeneous epitaxial growth method on a GaN (gallium nitride) substrate. The homogeneous epitaxial growth on the GaN substrate is realized through the lateral epitaxy of an annular pattern mask. The method has the advantages that a perfect GaN epitaxy layer can be obtained, the dislocation density can be effectively reduced, the dislocation density of the epitaxy layer can reach a value lower than 106/cm<2>, the piezoelectric polarization effect of a GaN-based LED (light emitting diode) can be effectively reduced, the inner quantum compounding efficiency and the outer quantum emitting efficiency can be improved, the integral light outlet efficiency can reach more than 1.5 times of that of an ordinary LED, the heating quantity of a device can be effectively reduced, and the service life of the device can be prolonged. |
| priorityDate | 2014-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.