http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104342137-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12a4b43099e8cc9b4c14dcc665bc8e79 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-69 |
| filingDate | 2013-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_398f344d8e2923f0c3dccd9a59c99b84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18fb27636b9a39a324b4af8f45f6f039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27fd2a08b8b22e4c45f3e10c20caa6ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4e96e9ba0b8f401dc8eb94633a435ca |
| publicationDate | 2015-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104342137-A |
| titleOfInvention | Ce-doped trivalent vanadium silicate light-emitting film as well as preparation method and application thereof |
| abstract | The invention discloses a Ce-doped trivalent vanadium silicate light-emitting film having a chemical formula of Me3VSi3O13:xCe<3+>, wherein x is not less than 0.01 and is not more than 0.05, Me3VSi3O13 is a matrix, Ce element is an active element, Me is Al, Ga, In or Tl. In the electroluminescence (EL) spectrum of the Ce-doped trivalent vanadium silicate light-emitting film, strong luminescence peaks appear in a 620nm-wavelength area; so that the Ce-doped trivalent vanadium silicate light-emitting film can be applied to a thin film electroluminescence device. The invention also provides a preparation method and application of the Ce-doped trivalent vanadium silicate light-emitting film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107201228-A |
| priorityDate | 2013-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.