http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104332539-B
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0025 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-08 |
filingDate | 2014-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2017-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2017-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-104332539-B |
titleOfInvention | GaN base LED epitaxial structure and its manufacture method |
abstract | The present invention proposes a kind of GaN base LED epitaxial structure and its manufacture method.The GaN base LED epitaxial structure includes:Substrate;The GaN base LED epitaxial structure of epitaxial growth over the substrate, wherein the substrate is the substrate of the fluorescent material containing luminescence generated by light.By using rare earth doped Re 3 Al 5 O 12 Substrate so that the photoelectric efficiency of LED epitaxial structure improves and reduces the caloric value of device;Because LED epitaxial layer structures are that, using fluorescent material as substrate, the LED chip prepared by the epitaxial structure can realize direct white light emission, so as to simplify the preparation section of white LED light source, production cost is reduced;By first extension and then patterned substrate, the defect concentration that lateral growth GaN base epitaxial structure reduces epitaxial structure is carried out again. |
priorityDate | 2013-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.