http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104282614-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2013-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104282614-B |
| titleOfInvention | A kind of method for forming fleet plough groove isolation structure |
| abstract | The present invention provides a kind of method for forming fleet plough groove isolation structure, including：Semiconductor substrate is provided, the hard mask layer with multiple fleet plough groove isolation structure patterns is formed on a semiconductor substrate；Multiple fleet plough groove isolation structures are formed in the semiconductor substrate；Remove part hard mask layer；Implement oxygen plasma processing in the part that multiple fleet plough groove isolation structures are higher by with hard mask layer；Annealing is performed, dense oxide layer is formed with the top and sidewall areas for the part that Semiconductor substrate is higher by multiple fleet plough groove isolation structures；And remove remaining hard mask layer.According to the present invention, because all dense oxide layers have stronger corrosion resistance and with identical mass property, formed on a semiconductor substrate before gate dielectric, DHF used in the wet-cleaning of implementation is obtained for preferable suppression to the corrosive effect for forming all fleet plough groove isolation structures on a semiconductor substrate, therefore, do not result in fleet plough groove isolation structure height it is inconsistent. |
| priorityDate | 2013-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.