http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104282521-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate | 2014-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104282521-B |
| titleOfInvention | Ion Beam Etching System |
| abstract | The present invention relates to ion beam etching systems, and more particularly, the disclosed embodiments relate to methods and apparatus for removing material from a substrate. In various embodiments, conductive material is removed from sidewalls of previously etched features, such as trenches, holes, or pillars, on a semiconductor substrate. In practicing the techniques herein, the substrate is disposed in a reaction chamber separated into an upper plasma generation chamber and a lower processing chamber by a corrugated ion extraction plate through which apertures pass. The extraction plate is corrugated such that the plasma sheath follows the shape of the extraction plate such that ions enter the underlying processing chamber at an angle relative to the substrate. As such, during processing, ions are able to penetrate into previously etched features and strike the substrate on the sidewalls of these features. Through this mechanism, material on the sidewalls of the feature can be removed. |
| priorityDate | 2013-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.