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filingDate 2013-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-104280160-B
titleOfInvention Pressure sensor and forming method thereof
abstract A kind of pressure sensor and forming method thereof, wherein, pressure sensor includes: substrate, and described substrate has device region, and described substrate surface has first medium layer, and described first medium layer surface has the first electrode layer;Being positioned at the second dielectric layer of the first electrode layer surface, the second dielectric layer of described device region has some first openings;It is positioned at the conductive side wall of the sidewall surfaces of described first opening;It is positioned at second dielectric layer surface and the second electrode lay of the first opening, between described the second electrode lay and second dielectric layer surface, conductive side wall surface and the lower surface of the first opening, there is cavity;It is positioned at the 3rd dielectric layer on the second electrode lay and second dielectric layer surface, there is in described 3rd dielectric layer second opening on the second electrode lay surface exposing device region.The sensitivity of described pressure sensor is improved.
priorityDate 2013-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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