| abstract |
Member for use in semiconductor (10) has AlN electrostatic chuck (20), coldplate (30) and coldplate chuck bonding layer (40).The 1st metallic bond layer (34), the 2nd metallic bond layer (35) being formed between the 2nd and the 3rd substrate (32,33) and the refrigerant passage (36) that coldplate (30) has the 1st～the 3rd substrate (31～33), is formed between the 1st and the 2nd substrate (31,32).1st～the 3rd substrate (31～33) is formed by compact substance composite, described compact substance composite from content many comprise SiC, Ti successively 3 SiC 2 And TiC.Metallic bond layer (34,35) is by clamping Al Si Mg system's grafting material and each substrate (31～33) being carried out hot press and formed between the 1st and the 2nd substrate (31,32) and between the 2nd and the 3rd substrate (32,33). |