http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104254906-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-3218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02074 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2013-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104254906-B |
| titleOfInvention | The processing method of semiconductor substrate cleaning agent and semiconductor substrate surface |
| abstract | It is an object of the invention to provide the processing method of the removability of the abrasive particles (particle) such as the excellent corrosion resistance of a kind of tungsten distribution or tungsten alloy distribution, the silica or aluminum oxide of the semiconductor substrate surface after chemical-mechanical polishing process, particularly the silicon oxide layer surface such as TEOS films remaining excellent semiconductor substrate cleaning agent and semiconductor substrate surface.The present invention relates to the processing method of a kind of semiconductor substrate cleaning agent and semiconductor substrate surface, the semiconductor substrate cleaning agent is characterised by, it is the cleaning agent used in the rear process of the chemical-mechanical polishing process of the semiconductor substrate with tungsten distribution or tungsten alloy distribution and silicon oxide layer, there is the unary primary amine or unitary secondary amine and (C) water of at least one alkyl or hydroxy alkyl containing (A) phosphonic acids system chelating agent, (B) intramolecular, pH is more than 6 and less than 7. |
| priorityDate | 2012-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 178.