http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104253182-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate | 2013-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104253182-B |
| titleOfInvention | A kind of blue-ray LED epitaxial structure with asymmetric barrier layer |
| abstract | A kind of blue-ray LED epitaxial structure with asymmetric barrier layer, is related to LED epitaxial technical field.Structure of the invention successively includes Sapphire Substrate, AlN buffer layer, U-shaped GaN layer, N-type GaN layer, active area, electronic barrier layer and p-type GaN layer from bottom to up, active area includes well layer and barrier layer, the growth cycle number of the active area is 3m period, active area includes three parts, the m period of each some growth, barrier layer is formed by AlxGa1-xN layers, AlyIn1-yN layers and InzGa1-zN layers, wherein 1≤m≤5.Compared with the existing technology, the present invention can slow down overflow phenomena and reduce the bending of energy band, internal quantum efficiency be improved, to effectively improve light extraction efficiency. |
| priorityDate | 2013-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.