http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104253150-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0615 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2014-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104253150-B |
| titleOfInvention | Semiconductor devices and its manufacture method |
| abstract | The invention discloses a kind of semiconductor devices and its manufacture method.Power semiconductor includes semiconductor body, and semiconductor body has laterally mutually adjacent active region and high voltage peripheral region, and high voltage peripheral region laterally surrounds active region.The device is further included：Metal layer, on the front of semiconductor body and is connected to active region；First barrier layer, including refractory metal or high-melting-point alloy, between active region and metal layer；And second barrier layer, at least a portion of outer peripheral areas is covered, the second barrier layer includes the semi insulating material of amorphous.Overlap and form overlapping region first barrier layer and the second barrier layer portions.Overlapping region is extended on the whole circumference of active region.Also provide a kind of method for manufacturing the power semiconductor. |
| priorityDate | 2013-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.