http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104241366-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 |
| filingDate | 2014-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104241366-B |
| titleOfInvention | Dislocation in the source area and drain region of FinFET is formed |
| abstract | The invention provides the embodiment of the mechanism that dislocation is formed in the source area of finFET device and drain region.The mechanism includes making fin recessed and removes the dielectric material of the neighbouring fin in isolation structure to increase the epitaxial region for forming dislocation.The mechanism is additionally included in recessed source area and drain region before or after carrying out epitaxial growth, performs pre-amorphous injection (PAI) technique.Annealing process after PAI techniques can grow consistent dislocation in source area with drain region.The dislocation in source area and drain region (or stress source region) can be identically formed produces target to strain with source area and drain region, so as to improve the carrier mobility and device performance of nmos device. |
| priorityDate | 2013-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.