| abstract |
The invention relates to a P-type reversible phase transformation high-performance thermoelectric material and a preparation method thereof; the thermoelectric material is an I-doped selenized copper based thermoelectric material with the chemical composition of Cu2Se1-xIx, 0 < x =< 0.08, and preferably 0.04 =< x=< 0.08. Thermoelectric material compound is a semiconductor, compared with a traditional bismuth telluride based thermoelectric material near room temperature, the compound is simple in composition, cheap in raw material and low in cost, has high Seebeck coefficient and excellent electrical conductivity in the phase transition region, and also has low thermal conductivity, and the thermoelectric figure of merit (ZT value) in the vicinity of the phase transition temperature region can reach about 1. |