http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104201559-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02476 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2022 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02461 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 2011-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104201559-B |
| titleOfInvention | Laser light source |
| abstract | The present invention relates to a kind of laser light sources, in particular for issuing the laser light source of the coherent electromagnetic radiation with vertical far-field beam profile, include: for generating the semiconductor layer group of coherent electromagnetic radiation, there is active area in substrate, coherent electromagnetic radiation is at least wherein issued with beam direction from the main emitter region in beam output coupling face in operation, beam output coupling face is formed by the side of the semiconductor layer group；Filter element, inhibit to generate in operation in vertical far-field beam profile, from beam output coupling face and the main emitter region vertical shift and coherent electromagnetic radiation that the secondary emitter region that is spatially separated issues；Wherein the semiconductor layer group and the filter element are respectively arranged on a heat sink, and wherein the filter element with the main emitter region and with the secondary emitter region vertical shift, from beam output coupling face, open by extension, the filter element especially can have the main extended surface for being parallel to beam direction. |
| priorityDate | 2010-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.