http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104183638-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 |
| filingDate | 2014-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104183638-B |
| titleOfInvention | The method of semiconductor device and manufacture semiconductor device |
| abstract | The method for disclosing semiconductor device and manufacture semiconductor device, the semiconductor device includes：The first semiconductor layer formed by nitride-based semiconductor on substrate；The second semiconductor layer formed by nitride-based semiconductor on the first semiconductor layer；It is formed in the insulating barrier on the second semiconductor layer；It is formed in source electrode and drain electrode on the second semiconductor layer；And formation gate electrode on the insulating layer.Insulating barrier is formed by the material including oxide, and formed by being followed by since the second semiconductor layer side placement order first insulating barrier of stacking and the second insulating barrier of the second insulating barrier according to the first insulating barrier, and the amount of the OH bases being included in the per unit volume of the first insulating barrier is less than the amount of the OH bases being included in the per unit volume of the second insulating barrier. |
| priorityDate | 2013-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.