http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104183480-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate | 2014-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104183480-B |
| titleOfInvention | Semiconductor device manufacturing method and substrate processing apparatus |
| abstract | A kind of semiconductor device manufacturing method, which includes the thin film circulated siliceous, oxygen, carbon and the III-th family specified or group V element are formed on base material by performing pre-determined number.The circulation includes：Siliceous, carbon and halogen are supplied to base material and there are the precursor gases and the first catalyzed gas of Si C keys；Oxidizing gas and the second catalyzed gas are supplied to base material；With the modified gas for containing the III-th family or group V element specified to base material supply. |
| priorityDate | 2013-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 150.