http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104170091-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2011-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104170091-B |
| titleOfInvention | Transistorized technology and the structure of stacked integrated circuit (IC)-components |
| abstract | The embodiment of present disclosure provides transistorized technology and the structure for stacked storage component part.In one embodiment, device comprises Semiconductor substrate, be formed on a plurality of fin structures in Semiconductor substrate, wherein the individual fin structure in a plurality of fin structures comprises the first separator being arranged in Semiconductor substrate, be arranged on the first channel layer on the first separator, be arranged on the second separator and gate terminal on the first channel layer, described gate terminal and the first channel layer capacitive couplings with control the first transistor of flowing through the first channel layer electric current flow and with the second channel layer capacitive couplings to control the flowing of electric current of the second channel layer of the transistor seconds of flowing through.Can describe and/or claimed other embodiment. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108701618-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108701618-A |
| priorityDate | 2011-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 79.