http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104167449-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-42388 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-443 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| filingDate | 2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104167449-B |
| titleOfInvention | Thin film transistor (TFT) and preparation method thereof, array base palte and display device |
| abstract | The present invention provides a kind of thin film transistor (TFT) and preparation method thereof, array base palte and display device.The preparation method of the thin film transistor (TFT), which is included on underlay substrate, forms grid, gate insulation layer, active area, source electrode and drain electrode, active area is formed using ZnON materials, processing is controlled to the material for forming gate insulation layer while gate insulation layer is formed, when the thin film transistor (TFT) is worked, gate insulation layer can constantly supplement nitrogen into active area, so that subthreshold swing≤0.5mV/dec of thin film transistor (TFT).The preparation method greatly improves the nitrogen element content in gate insulation layer, so that when thin film transistor (TFT) works, gate insulation layer can constantly supplement nitrogen into active area, so as to substantially increase the mobility in nitrogen room in active area, namely substantially increase the mobility of carrier in active area, and then the subthreshold swing of thin film transistor (TFT) is reduced, improve the characteristic of semiconductor of thin film transistor (TFT). |
| priorityDate | 2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.