http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104164704-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0209 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-12 |
| filingDate | 2010-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104164704-B |
| titleOfInvention | High throughput multi-wafer epitaxial reactor |
| abstract | Present invention is disclosed it is a kind of can on polylith chip simultaneously deposition film epitaxial reactor.During depositing, many chips are included in chip set, and the chip set includes many chip carrying disks, and the chip carrying disk is closely separated by so as to handle volume minimization.Processing gas preferentially flows into the internal volume of chip set, and chip set is heated with one or more lamp modules.Chip set flowed outside of the purge gas in reative cell, so that the deposition on locular wall minimize.In addition, the independent lamp in lamp module illumination sequence, can further improve chip set in deposition change it is linear.In order to improve uniformity, the direction of processing gas flowing can be with cross flow one change of configuration.Lamp bank sequence is combined in multiple reactor assemblies and cross flow one is handled, can there is the deposition and good uniformity of film of high yield, and processing gas is efficiently used. |
| priorityDate | 2009-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.