http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104157687-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0607 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7839 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2014-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104157687-B |
| titleOfInvention | A kind of perpendicular rings grid tunneling transistor and preparation method thereof |
| abstract | A kind of ring grid field effect transistor of combination vertical-channel, foreign peoples's impurity segregation and Schottky-barrier source/drain structure, including a ring-type semiconductor channel for vertical direction, one endless gate electrode, one ring-type gate dielectric layer, one source region, an impurity segregation area, a drain region, one impurity segregation area, a Semiconductor substrate；Wherein, source region is located at the bottom of vertical-channel, connects with substrate, and impurity segregation area is between source region and vertical-channel；Drain region is located at the top of vertical-channel, and impurity segregation area is between drain region and vertical-channel；Gate dielectric layer and gate electrode are annular in shape around firmly vertical-channel；Source region and drain region form Schottky contacts with raceway groove respectively；The impurity in the impurity segregation area and impurity segregation area is selected from foreign peoples's material, i.e.,：When the impurity in impurity segregation area is selected from p-type material, the impurity in impurity segregation area is selected from n-type material；When the impurity in impurity segregation area is selected from n-type material, the impurity in impurity segregation area is selected from p-type material. |
| priorityDate | 2014-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.