http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104155719-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d9de52bba13e16028dffa8775e3f3f28
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-122
filingDate 2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2b8a4a18ca6fb8e96e5175021f41fe9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84b615deb0808f745b2b668c25ad2064
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publicationDate 2014-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-104155719-A
titleOfInvention Structure for dynamically adjusting chirp value of silicon-based waveguide grating
abstract A structure for dynamically adjusting the chirp value of a silicon-based waveguide grating comprises a substrate, a limitation layer, a waveguide layer, an upper cladding layer and electrode layers all connected in sequence from bottom to top, wherein the waveguide layer adopts a ridge-shaped structure; a silicon waveguide in the middle of the inner ridge, silicon saw-teeth on the two sides of the inner ridge and a gap in the upper cladding layer form a chirp waveguide grating alternately; heavy doping areas are arranged on the two sides of the chirp waveguide grating; the interval between the edge of each heavy doping area and the chirp waveguide grating has a certain functional relation in the length direction of the chirp waveguide grating. According to the invention, heat is generated in each heavy doping area through the injection of current, and the characteristic that the distances between the silicon-based chirp waveguide grating edges at different positions and the edge of each heavy doping area are different is utilized, so that the heating of the chirp waveguide grating is not uniform, further an additional temperature gradient value is generated, and the total chirp value of the chirp waveguide grating can be changed through changing the temperature gradient value; the structure has the advantages that the structure is simple, the adjustment is convenient, and the structure is completely compatible with a microelectronic integrated circuit technology.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113541799-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023048652-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112556906-A
priorityDate 2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.