http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104155390-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N30-06 |
| filingDate | 2014-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104155390-B |
| titleOfInvention | Preparation method and the detection method of semiconductor element trace element detection sample |
| abstract | The present invention has disclosed a kind of preparation method and detection method of semiconductor element trace element detection sample. This preparation method comprises: carry out mold processing to detecting sample; The detection sample that cutting mold completes, makes cut surface approach region to be analyzed; Described cut surface is carried out to polishing, come out in region to be analyzed; Described detection sample is sent in TOF-SIMS high vacuum chamber, utilized ion gun to clear up to remove to described detection sample cut surface the impurity that is adsorbed on tangent plane in cutting and polishing process. This has ensured to detect in sample preparation process does not introduce new pollutant, after a series of polishing and cleanup step, detects the situation that example interface can truly reflect sample interior. This detection method is carried out surface analysis by TOF-SIMS to the detection sample making can provide the true element distributed intelligence of sample deep layer tangent plane, thereby has realized the effective detection to deep layer trace element. |
| priorityDate | 2014-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.