http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104143529-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2013-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104143529-B |
| titleOfInvention | The forming method of metal plug and the forming method of nand flash memory |
| abstract | The forming method of a kind of metal plug and the forming method of nand flash memory.The forming method of described metal plug includes: provide Semiconductor substrate；Form sacrifice layer on the semiconductor substrate；Multiple manholes arranged in arrays are formed in described sacrifice layer；The first metal column is formed in described manhole；Remove described sacrifice layer；Form side wall in the side of described first metal column, the twice of described side wall thicknesses is more than with the distance between two manholes adjacent in a line, and the twice of described side wall thicknesses is more than with the distance between two manholes adjacent in string；The second metal column is formed in described Semiconductor substrate between described side wall.Described forming method forms the second metal column by increasing between the first metal column, it is possible to forms the metal plug array of dense arrangement, owing to need not use twice mask plate, the most there is not alignment precision problem, simplify technique, reduce cost. |
| priorityDate | 2013-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.