http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104137250-B

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filingDate 2013-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2017-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-104137250-B
titleOfInvention Structure and method for strain-relieved tsv
abstract A semiconductor die including strain relief for through substrate vias (TSVs). The semiconductor die includes a semiconductor substrate having an active face. The semiconductor substrate includes conductive layers connected to the active face. The semiconductor die also includes a through substrate via extending only through the substrate. The through substrate via may include a substantially constant diameter through a length of the through substrate via. The through substrate via may be filled with a conductive filler material. The semiconductor die also includes an isolation layer surrounding the through substrate via. The isolation layer may include two portions: a recessed portion near the active face of the substrate capable of relieving stress from the conductive filler material, and a dielectric portion. A composition of the recessed portion may differ from the dielectric portion.
priorityDate 2012-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 23.