| abstract |
An object of the present invention is to provide a light-emitting device that is compact, has sufficient strength, and has high mass productivity. For this reason, the light emitting device of the present invention has: a semiconductor chip, which includes a p-type semiconductor layer and an n-type semiconductor layer, and emits light between the p-type semiconductor layer and the n-type semiconductor layer; The upper surface side of the semiconductor chip is arranged on the p-type semiconductor layer; the n-side pad electrode is located on the upper surface side of the semiconductor chip and arranged on the n-type semiconductor layer; the resin layer is arranged To cover the upper surface of the semiconductor chip; and a p-side connection electrode and an n-side connection electrode arranged on the outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip, the p-side pad electrode At least one of between the p-side connection electrode and between the n-side pad electrode and the n-side connection electrode is connected by a wire arranged in the resin. |