http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104101824-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2014-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104101824-B |
| titleOfInvention | The method of monitoring pattern chip gate oxidation layer surface |
| abstract | The method of monitoring pattern chip gate oxidation layer surface of the invention, including：Semi-conductive substrate is provided, a grid oxic horizon is formed with the Semiconductor substrate；The surface information of multiple lattice points on the grid oxic horizon is detected, distribution, average value and the standard deviation of the surface information is obtained；And according to the average value and standard deviation of the surface information, judge whether the growth technique of the grid oxic horizon is stablized.The surface information is work function and/or surface potential.The method of monitoring pattern chip gate oxidation layer surface of the present invention, use the method for electrical detection, detect the work function and surface potential of gate oxidation layer surface, the surface information of detection both can be used for the daily monitoring of grid oxic horizon, the graphical wafer that express delivery screening possesses the grid oxic horizon of superior quality is can be used for, the deficiency of traditional detection method is compensate for. |
| priorityDate | 2014-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291 |
Total number of triples: 11.