| abstract |
A kind of high-frequency semiconductor apparatus, wherein, on a surface of semiconductor substrate, start to sequentially form the first insulating barrier, the undoped p epitaxial polysilicon layer of column crystallization state, the second insulating barrier and semiconductor layer from a face side, and high frequency transistor is formed in semiconductor layer in the face of the position of undoped p epitaxial polysilicon layer, and there is the second insulating barrier therebetween. |