http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104078399-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67213 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate | 2014-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104078399-B |
| titleOfInvention | Reaction chamber and method for SiConi etchings |
| abstract | The invention provides a kind of reaction chamber and method for SiConi etchings, belong to semiconductor technology manufacturing field, by setting multiple wafer susceptors in reaction chamber, low temperature pedestal replaces with high temperature pedestal to form a circle, swivel mount, which rotates wafer to adjacent wafer susceptor along same direction, to be performed etching or volatilizees, until wafer is rotated to unloading port.The present invention is simple and practical, increases wafer production capacity, increases economic efficiency；In addition, when wafer carries out volatilization technique, argon gas is conveyed to crystal column surface, the evaporation rate of crystal column surface etch by-products can be accelerated, further improves the production capacity of wafer in the unit interval. |
| priorityDate | 2014-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.