http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104051512-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4148 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772 |
| filingDate | 2013-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104051512-B |
| titleOfInvention | The back side sensing biological field effect transistor of performance enhancement |
| abstract | The present invention provides a kind of biological field effect transistor（BioFET）With the method for manufacture BioFET device.This method includes：Using with complementary metal oxide semiconductor（CMOS）Process compatible or the distinctive one or more processing steps of CMOS technology form BioFET.BioFET device includes the dielectric layer in the opening of substrate, the transistor arrangement with the process layer adjacent to channel region, separation layer and the separation layer in process layer.Dielectric layer and process layer are arranged on the side relative with grid structure of transistor.Process layer can be the channel layer or depletion layer being lightly doped.Biological field effect transistor is sensed present invention also offers a kind of back side of performance enhancement. |
| priorityDate | 2013-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.